Discovery

Poster

Molecular routes to transition metal dichalcogenides

Alexander Sadlo, Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-Universität Bochum, Bochum, Germany
Stefan Cwik, Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, Bochum, Germany
Rene Albert, Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University Duisburg-Essen, Duisburg, Germany
Grafen Markus, Chair of Applied Laser Technology (LAT), Ruhr-University Bochum, Bochum, Germany
Detlef Rogalla, RUBION, Ruhr-University Bochum, Bochum, Germany
Hans-Werner Becker, RUBION, Ruhr-University Bochum, Bochum, Germany
Roland Schmechel, Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University Duisburg-Essen, Duisburg, Germany
Andreas Ostendorf, Chair of Applied Laser Technology (LAT), Ruhr-University Bochum, Bochum, Germany
Anjana Devi, Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, Bochum, Germany

Transition metal dichalcogenides (TMDs) like molybdenum disulfide (MoS₂) films have been traditionally known as a solid lubricant for tribological applications in high temperature and vacuum environments. Recently, 2D layered MoS₂ materials have attracted a lot of research capacity, since it is known that monolayers of MoS₂ exhibit advantageous properties compared to their bulk counterpart, such as a direct band gap of 1.8 eV, excellent on/off current ratios and high carrier mobilities [1]. The sizable direct bandgap makes MoS₂ a promising material for low power digital electronics, photonics, sensing and catalysis applications.

Therefore, much effort has been devoted to the preparation of mono- and few layers MoS₂, including chemical exfoliation, sulfurization of MoO₃ films and chemical vapor deposition (CVD) related techniques [2]. Most of these methods suffer from limitations, such as control of the film thickness or poor large-area homogeneity [3].

In the present work, we report on a straightforward solution-based approach for the deposition of few layers MoS₂ thin films using molecular precursors followed by stepwise annealing. Efforts were focused on growing thin layers and the fabricated thin films were thoroughly investigated via X-ray diffraction, scanning electron microscopy, Rutherford backscattering/nuclear reaction analysis, X-ray photoelectron spectroscopy and Raman spectroscopy.

References
[1] Y. Jang, S. Yeo, H.-B.-R. Lee, H. Kim and S.-H. Kim, Applied Surface Science, 2016, 365, 160–165.
[2] X. Chia, A. Y. S. Eng, A. Ambrosi, S. M. Tan and M. Pumera, Chemical reviews, 2015, 115, 11941–11966.
[3] Y. Shi, H. Li and L.-J. Li, Chemical Society reviews, 2015, 44, 2744–2756.

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