Molecular routes to transition metal dichalcogenides
Alexander Sadlo, Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-Universität Bochum, Bochum, GermanyStefan Cwik, Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, Bochum, GermanyRene Albert, Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University Duisburg-Essen, Duisburg, GermanyGrafen Markus, Chair of Applied Laser Technology (LAT), Ruhr-University Bochum, Bochum, GermanyDetlef Rogalla, RUBION, Ruhr-University Bochum, Bochum, GermanyHans-Werner Becker, RUBION, Ruhr-University Bochum, Bochum, GermanyRoland Schmechel, Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University Duisburg-Essen, Duisburg, GermanyAndreas Ostendorf, Chair of Applied Laser Technology (LAT), Ruhr-University Bochum, Bochum, GermanyAnjana Devi, Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, Bochum, Germany
Transition metal dichalcogenides (TMDs) like molybdenum disulﬁde (MoS2) ﬁlms have been traditionally known as a solid lubricant for tribological applications in high temperature and vacuum environments. Recently, 2D layered MoS2 materials have attracted a lot of research capacity, since it is known that monolayers of MoS2 exhibit advantageous properties compared to their bulk counterpart, such as a direct band gap of 1.8 eV, excellent on/off current ratios and high carrier mobilities . The sizable direct bandgap makes MoS2 a promising material for low power digital electronics, photonics, sensing and catalysis applications.
Therefore, much effort has been devoted to the preparation of mono- and few layers MoS2, including chemical exfoliation, sulfurization of MoO3 films and chemical vapor deposition (CVD) related techniques . Most of these methods suffer from limitations, such as control of the film thickness or poor large-area homogeneity .
In the present work, we report on a straightforward solution-based approach for the deposition of few layers MoS2 thin films using molecular precursors followed by stepwise annealing. Efforts were focused on growing thin layers and the fabricated thin films were thoroughly investigated via X-ray diffraction, scanning electron microscopy, Rutherford backscattering/nuclear reaction analysis, X-ray photoelectron spectroscopy and Raman spectroscopy.
 Y. Jang, S. Yeo, H.-B.-R. Lee, H. Kim and S.-H. Kim, Applied Surface Science, 2016, 365, 160–165.
 X. Chia, A. Y. S. Eng, A. Ambrosi, S. M. Tan and M. Pumera, Chemical reviews, 2015, 115, 11941–11966.
 Y. Shi, H. Li and L.-J. Li, Chemical Society reviews, 2015, 44, 2744–2756.