Elaboration of p-type emitters on n-type silicon wafers: experimental conditions effect of boron diffusion
Abdelghani Boucheham, Research Center in Semiconductor Technology for Energetics, Algiers, AlgeriaAli Saibi, Research Center in Semiconductor Technology for Energetics, Algiers, AlgeriaYoucef Belkacem, Research Center in Semiconductor Technology for Energetics, Algiers, Algeria
N-type crystalline silicon based solar cells have attracted considerable attention in the recent few years from researchers and solar cells manufacturers due to its high bulk lifetime, as well as to the absence of the light induced degradation lifetime caused by the presence of the boron-oxygen complexes. The elaboration of a p-type emitter on n-type wafer can be performed by several methods, in this work, a paper boron source so-called preform source was used. The main objectives of this study were to investigate the effect of boron diffusion temperature and duration as experimental conditions on the different characteristics of the formed emitter, like sheet resistance, boron surface concentration and depth junction by using four point probe and secondary ion mass spectrometry.