Conductive thin film CVD: Graphene
Gottlieb, S. and Wöhrl, N. and Buck, V.
CHEMICAL VAPOR DEPOSITION (CVD): TYPES, USES AND SELECTED RESEARCH
Volume: Pages: 31-50
Graphene is considered to be one of the future materials in electronics industry. It attracts the attention of many not only because of its electronic properties, but also due to outstanding optical and mechanical characteristics. To make graphene available for novel applications and to amplify large-scale research opportunities on graphene, it is crucial to develop a reproducible and up-scalable way to synthesize this material. Interestingly, the synthesis of graphene via chemical vapor deposition is a versatile way to address these requirements using modern production techniques. While the graphene growth on copper substrates is self-limited, the growth of graphene on nickel is based on a solution process of carbon in the bulk material. This conceptual difference gives rise to different growth mechanisms in the deposition process. We use the examples of copper and nickel to outline advantages and drawbacks of the respective substrates. This chapter provides an overview of different reactor types that have been proved to be viable options for graphene growth. We compare the thermal CVD process of graphene with PE-CVD. It is our aim to discuss advantages and disadvantages of graphene growth via PE-CVD over thermal CVD. In the last section of this chapter we analyze a MW PE-CVD process and explain in detail, how changing growth conditions influence the quality of the synthesized graphene film. © 2017 Nova Science Publishers, Inc. All rights reserved.