Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition
Sun, Long and Lu, Hong-Liang and Chen, Hong-Yan and Wang, Tao and Ji, Xin-Ming and Liu, Wen-Jun and Zhao, Dongxu and Devi, Anjana and Ding, Shi-Jin and Zhang, David Wei
NANOSCALE RESEARCH LETTERS
Volume: 12 Pages: 102
Published: feb 2017
The influences of annealing temperature in N-2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual H2O in N-2 atmosphere reacting with AlN film during the annealing treatment. Accordingly, the Si-N bonding at the interface gradually transforms to Si-O bonding with the increasing temperature due to the diffusion of oxygen from AlN film to the Si substrate. Specially, the Si-O-AI bonding state can be detected in the 900 degrees C-annealed sample. Furthermore, it is determined that the band gap and valence band offset increase with increasing annealing temperature.